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You may modify the talked about parameters, and Examine it that has a "good" outcome which will take 2 several hours siumlation time. Based on your criteria, you'll be able to quicken the simulation time.
So can someone remember to describe how FET with minimal threshold voltage has higher velocity and better leakage recent whilst FET with high threshold will probably be sluggish but reduced on power?
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I'd exact same dilemma with Pictures , cek tat the sample data files operate in regular pace, i cudnt take care of the issue fully, try out removing the crystal and putting mcu speed at 1Mhz in its Qualities
* You might have numerous wires intending to ground through other wires. The simulator is applying cpu cycles needlessly to compute current in Those people joined wires (Irrespective that their volt amount is zero). Give Every single of those wires its possess ground.
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In case of lvt, conc. of doping and oxide thickness is more Evaluate to hvt.. And this The main reason that a lot more the doping, so more velocity and more leakage compare to hvt.
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Typically this takes place after you externally wire a crystal and so forth. - this introduces an incredibly higher pace oscillator which bottlenecks the simulation and is totally superfluous in any case. Clock frequency is specified to be click here a home in the microcontroller product.